Mouser Electronics stocks Nexperia E-Mode GAN FETs for low and high-voltage applications

GaN FETs provide power density enhancement by reducing conduction and switching losses, making them suitable for consumer and industrial applications.

The Nexperia 650 V E-Mode GAN FETs feature RDS(on) values between 80 mΩ and 190 mΩ) in a choice of DFN 5x6 mm and DFN 8x8 mm packages. These improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.

Nexperia now also offers a 100 V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150 V (7 mΩ) device in an FCLGA package. These devices are suitable for various low-voltage (<150 V), high-power applications to deliver, for example, more efficient DC-DC converters in data centers, faster charging (e-mobility and USB Type-C™), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptops and game consoles.

GaN FETs offer the highest power efficiency with the most compact solution size in many power conversion applications, features that substantially reduce the bill of materials (BOM). GaN-based devices offer the fastest transition and switching capability (highest dv/dt and di/dt) and deliver superior efficiency in both low-power and high-power conversion applications. The outstanding switching performance of Nexperia's e-mode GaN FETs is attributable to very low Qg and QOSS values, while their low RDS(on) enables more power-efficient designs.

To learn more about Nexperia E-Mode GAN FETs, visit https://www.mouser.com/new/nexperia/nexperia-gan-emode-fets/.

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